?
Semiconductor Components Industries, LLC, 2006
March, 2006 ? Rev. 1
1
Publication Order Number:
J309/D
J309, J310
Preferred Device
JFET VHF/UHF Amplifiers
N?Channel — Depletion
Features
?
Pb?Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain?Source Voltage
VDS
25
Vdc
Gate?Source Voltage
VGS
25
Vdc
Forward Gate Current
IGF
10
mAdc
Total Device Dissipation @ TA
= 25
°C
Derate above = 25°C
PD
350
2.8
mW
mW/°C
Junction Temperature Range
TJ
?65 to +125
°C
Storage Temperature Range
Tstg
?65 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb?Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MARKING DIAGRAM
http://onsemi.com
TO?92
CASE 29?11
STYLE 5
1
2
3
J3xx
AYWW
1 DRAIN
2 SOURCE
3
GATE
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
J3xx = Device Code
xx = 09 or 10
A = Assembly Location
Y = Year
WW = Work Week
= Pb?Free Package
(Note: Microdot may be in either location)
Preferred
devices are recommended choices for future use
and best overall value.
发布紧急采购，3分钟左右您将得到回复。
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LA-301BB
LED 7-SEG .315" 1DIGIT BLUE CA
LA-401BN
DISPLAY 7SEG 10.16MM 1DGT BLU CC
LA-601BL
DISPLAY 7SEG 14.6MM 1DGT BLUE CC
LB-302VF
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DISPLAY 7SEG 10.16MM 2DGT GRN CA
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相关代理商/技术参数
J309
制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR JFET N TO-92
J309_10
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel RF Amplifier
J309_12
制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:JFET VHF/UHF Amplifiers N.Channel . Depletion
J309_D26Z
功能描述:射频JFET晶体管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel
J309_D27Z
功能描述:射频JFET晶体管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel
J309_D74Z
功能描述:射频JFET晶体管 NCh RF Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel
J309_Q
功能描述:射频JFET晶体管 NCh RF Transistor
RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel
J309_TO-92
制造商:MICROSS 制造商全称:MICROSS 功能描述:N-CHANNEL JFET